The VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an original design for an innovative light detector we proposed with the aim to create new scientific instrumentation for future missions of exploration and observation of the universe. The idea behind this device is to replace the classical dynode chain of a photomultiplier tube with a silicon photomultiplier, the latter acting as an electron detector and amplifier. In this way we obtain a large area photodetector with an excellent photon counting, proper of the SiPMs, but with the dark noise of only one SiPM (1-inch is equivalent to ∼ 54 SiPM 3 × 3 mm2). From this point of view, the VSiPMT offers very attractive features and unprecedented performance in large area detection, such as: negligible power consumption, excellent SPE resolution, easy low-voltage-based stabilization and very good time performance. Hamamatsu realized for our group a 1-inch prototype. The results of the full characterization of the device are presented in this work.
Another step towards photodetector innovation: The first 1-inch industrial VSiPMT
Vivolo D.;
2018
Abstract
The VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an original design for an innovative light detector we proposed with the aim to create new scientific instrumentation for future missions of exploration and observation of the universe. The idea behind this device is to replace the classical dynode chain of a photomultiplier tube with a silicon photomultiplier, the latter acting as an electron detector and amplifier. In this way we obtain a large area photodetector with an excellent photon counting, proper of the SiPMs, but with the dark noise of only one SiPM (1-inch is equivalent to ∼ 54 SiPM 3 × 3 mm2). From this point of view, the VSiPMT offers very attractive features and unprecedented performance in large area detection, such as: negligible power consumption, excellent SPE resolution, easy low-voltage-based stabilization and very good time performance. Hamamatsu realized for our group a 1-inch prototype. The results of the full characterization of the device are presented in this work.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
