The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with PrBa2Cu3-xGaxO7-delta (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with x greater than or equal to 0.7 contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched SrTiO3 substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.
Microstructure of YBaCuO Josephson junctions in relation to their properties
TAFURI, Francesco;
1998
Abstract
The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with PrBa2Cu3-xGaxO7-delta (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with x greater than or equal to 0.7 contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched SrTiO3 substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
