We have studied possible implementations of high-resistance tunnel barriers for an all-YBa2Cu3O7-delta superconducting single-electron transistor (SSET). The step-edge and biepitaxial techniques have been employed to fabricate the junctions. Both technologies appear very promising for the implementation of all-high-T-c SSET.
Tunnel barriers for an all-high-Tc single electron tunneling transistor
TAFURI, Francesco;
2002
Abstract
We have studied possible implementations of high-resistance tunnel barriers for an all-YBa2Cu3O7-delta superconducting single-electron transistor (SSET). The step-edge and biepitaxial techniques have been employed to fabricate the junctions. Both technologies appear very promising for the implementation of all-high-T-c SSET.File in questo prodotto:
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