In this paper the influence of proximity effects on the transport properties of high-T(c) superconductors is considered. On the basis of the experimental results on tunneling spectroscopy reported in the current literature, we discuss some of the main features of dI/dV vs. V characteristics. More particularly, attention is focused on the depression of gap structure, the presence of conductance peaks due to the counterelectrode gap, and "zero-bias anomalies." A possible explanation of those features in terms of the McMillan proximity model is given along with some examples of application of the model to experimental data
A qualitative explanation of tunneling characteristics of high Tc junctions in terms of the McMillan proximity model
TAFURI, Francesco
1991
Abstract
In this paper the influence of proximity effects on the transport properties of high-T(c) superconductors is considered. On the basis of the experimental results on tunneling spectroscopy reported in the current literature, we discuss some of the main features of dI/dV vs. V characteristics. More particularly, attention is focused on the depression of gap structure, the presence of conductance peaks due to the counterelectrode gap, and "zero-bias anomalies." A possible explanation of those features in terms of the McMillan proximity model is given along with some examples of application of the model to experimental dataFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.