The behavior of a Josephson system under pulsed operation is of utmost importance for developing reliable digital devices working at very high clock frequencies. Information about effect of thermal noise over pulsed operation is also useful to design errors free devices. Recent experiments in a system of two stacked junctions show that pulses applied to the first junction (injector) of the stack drive the Josephson biased second junction (detector) in the resistive state. The experiment was interpreted as pulsed-assisted escape toward resistive state as a consequence of an excitation of large non-linear oscillations in the detector junction that, with the contribution of thermal noise, drives out the junction from the zero voltage state. Moreover, an unstability of the resistive state toward the zero voltage state under the same pulsed operation was also noted. By means of a systematic numerical approach to the problem, we present a study of the pulsed-assisted escape using the framework of the thermal escape theory for the direct transition from zero voltage state to resistive state. We study the single junction case and a stacked configuration as examples of different systems showing pulsed-assisted escape.
Pulsed-assisted escape from zero voltage state in Josephson systems
ROTOLI, Giacomo;
2002
Abstract
The behavior of a Josephson system under pulsed operation is of utmost importance for developing reliable digital devices working at very high clock frequencies. Information about effect of thermal noise over pulsed operation is also useful to design errors free devices. Recent experiments in a system of two stacked junctions show that pulses applied to the first junction (injector) of the stack drive the Josephson biased second junction (detector) in the resistive state. The experiment was interpreted as pulsed-assisted escape toward resistive state as a consequence of an excitation of large non-linear oscillations in the detector junction that, with the contribution of thermal noise, drives out the junction from the zero voltage state. Moreover, an unstability of the resistive state toward the zero voltage state under the same pulsed operation was also noted. By means of a systematic numerical approach to the problem, we present a study of the pulsed-assisted escape using the framework of the thermal escape theory for the direct transition from zero voltage state to resistive state. We study the single junction case and a stacked configuration as examples of different systems showing pulsed-assisted escape.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
