A general method is proposed to analyze interconnects with perfect conductors and homogeneous dielectrics, which is valid from zero frequency to microwave frequencies. In this method, facet elements have been used to represent the current density field. To overcome the low-frequency breakdown problem, the divergence-free and non divergence-free components of the current density field are separated by using the null and pseudo inverse of the matrix approximating the divergence operator. © 2005 IEEE.

Analysis of interconnects in huge frequency ranges with a 3-D superficial integral formulation

Chiariello, A. G.;
2005

Abstract

A general method is proposed to analyze interconnects with perfect conductors and homogeneous dielectrics, which is valid from zero frequency to microwave frequencies. In this method, facet elements have been used to represent the current density field. To overcome the low-frequency breakdown problem, the divergence-free and non divergence-free components of the current density field are separated by using the null and pseudo inverse of the matrix approximating the divergence operator. © 2005 IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11591/385229
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