A phenomenological investigation of the de Josephson current in superconductor- (S-) normal-metal-(N) [semiconductor- (Sm-)] superconductor junctions is carried out as a function of the carrier concentration in the barrier. The occurrence of a nonmonotonic dependence of the Josephson current on the carrier concentration is predicted within some limits. This study suggests that in S-N- (Sm-) S structures there is an optimum carrier concentration range which gives the maximum value of the Josephson current I-C and the junction parameter l(C)R(N).
Variation of the Josephson current with carrier concentration in the barrier
TAFURI, Francesco
1997
Abstract
A phenomenological investigation of the de Josephson current in superconductor- (S-) normal-metal-(N) [semiconductor- (Sm-)] superconductor junctions is carried out as a function of the carrier concentration in the barrier. The occurrence of a nonmonotonic dependence of the Josephson current on the carrier concentration is predicted within some limits. This study suggests that in S-N- (Sm-) S structures there is an optimum carrier concentration range which gives the maximum value of the Josephson current I-C and the junction parameter l(C)R(N).File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
